Zadient Technologies produces high-purity synthetic silicon carbide (SiC) source material for crystal growth, which is essential for manufacturing power semiconductors used in electric vehicle inverters and renewable energy systems. Their SiC materials enable up to 20% longer range and 50% shorter charging times for electric vehicles, while also reducing energy losses by up to 50% in grid integration applications.
Funding
Funding not disclosed
Founders
Product
Problem
The production of silicon carbide (SiC) crystals, essential for manufacturing power semiconductors used in electric vehicles and renewable energy systems, relies on high-purity source material. Impurities in the source material can reduce crystal yields and negatively impact the performance of downstream power devices.
Solution
Zadient Technologies manufactures ultra-high purity synthetic silicon carbide (SiC) source material designed to enhance crystal growth processes. Their SiC materials, boasting purity levels up to 99.999999% (8N), facilitate increased crystal yields and improved performance in power semiconductors. These semiconductors are critical components in electric vehicle inverters and chargers, enabling longer driving ranges and faster charging times, as well as in grid integration applications, where they minimize energy losses. Zadient is also developing advanced crystal growth technologies utilizing its source material to further improve yields in large-diameter crystals.
Target Audience
The primary customers are manufacturers of silicon carbide crystals and wafers used in power semiconductors for electric vehicles, renewable energy systems, and other high-power applications.
Features
- Ultra-high purity (up to 8N) synthetic silicon carbide (SiC) source material
- Designed to increase crystal yields during SiC crystal growth
- Enables the production of high-performance power semiconductors
- Materials contribute to longer driving ranges and faster charging times in electric vehicles
- Reduces energy losses in grid integration applications by up to 50% compared to silicon
- Development of new crystal growth technologies targeting yield improvements in large diameter crystals