Xtal.works offers custom bulk silicon‑carbide crystal growth using a gas‑phase reactor that produces wafers 200 mm and larger at up to three times the rate of conventional methods, with CFD‑optimized thermal gradients to minimize dislocations and ensure uniformity. The service includes fully characterized wafers, pilot‑line development, and optional licensing of proprietary process IP for power‑electronics manufacturers, semiconductor fabs, and research institutions.
Funding
Funding not disclosed
Founders
Product
Problem
The supply chain for wide‑bandgap semiconductor substrates, especially silicon carbide (SiC), is constrained by limited crystal sizes, slow growth rates, and high thermal gradients, making it difficult for power‑electronics manufacturers and research labs to obtain high‑quality, large‑diameter wafers on schedule.
Solution
Xtal.works delivers custom bulk crystal growth services that overcome these limitations by employing a gas‑phase growth platform capable of producing SiC crystals 200 mm and larger at substantially higher rates while maintaining low thermal gradients. The process is engineered through high‑fidelity CFD and thermodynamic simulations, enabling precise control of dopant incorporation, crystal orientation, and defect density. Clients receive fully characterized wafers or bespoke material batches, along with detailed process documentation and IP licensing options. The company also offers a pilot‑line development pathway that validates commercial viability before technology transfer to a dedicated production partner or spin‑out.
Target Audience
Primary customers are power‑electronics manufacturers, semiconductor fabs, and research institutions that require large‑diameter, high‑performance SiC wafers for devices such as inverters, RF amplifiers, and quantum components.
Features
- Gas‑phase bulk growth reactor delivering SiC crystals ≥200 mm with growth rates up to × 3 faster than conventional PVT/HTCVD methods.
- Integrated CFD‑driven thermal‑gradient optimization to minimize dislocation density and improve uniformity.
- Tailorable dopant and alloying profiles via in‑situ gas‑phase chemistry control, supporting n‑type, p‑type, and semi‑insulating substrates.
- Full material characterization suite (X‑ray topography, Hall measurements, Raman spectroscopy) and data package for downstream fab integration.
- Scalable pilot‑line infrastructure capable of generating up to €100 M in revenue before technology hand‑off.
- Robust IP framework with patent filing support and optional licensing of proprietary process recipes.
- Sustainable consumable strategy using recyclable graphite, quartz, and ceramic components to reduce environmental impact.