Wolfspeed provides silicon carbide (SiC) and gallium nitride (GaN) power and RF solutions that enhance energy efficiency and thermal performance in high-power applications. Their technology addresses the need for reliable and efficient power management in industries such as automotive, telecommunications, and renewable energy.
Funding
$200M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
Founders
Product
Problem
Traditional silicon-based power solutions often struggle to meet the increasing demands for energy efficiency, thermal performance, and reliability in high-power applications, leading to larger, heavier, and less efficient systems. This is particularly challenging in industries like automotive, telecommunications, and renewable energy, where optimizing power management is critical.
Solution
Wolfspeed provides silicon carbide (SiC) and gallium nitride (GaN) power and RF solutions that overcome the limitations of traditional silicon. Their vertically integrated approach, from SiC substrate to power device fabrication, enables unparalleled reliability and performance at scale. Wolfspeed's solutions facilitate the design of smaller, lighter, and more efficient power systems, leading to improved energy efficiency and thermal management. By transitioning from silicon to silicon carbide, customers can achieve higher power density, reduced system costs, and enhanced sustainability.
Target Audience
The primary target audience includes designers and manufacturers in the automotive (EV Powertrain, On-Board Chargers, DC/DC Converters), e-mobility (Commercial, Construction & Agriculture Vehicles, E-Boats and E-Ships, Trains & Traction), industrial (Datacenter & Server Power Supplies, Uninterruptible Power Supplies, Industrial Motor Drives), and renewable energy (Energy Storage Systems, Solar Systems, Utility Scale Renewable Energy) sectors.
Features
- Silicon Carbide (SiC) Power Modules for high-voltage, high-current applications
- Discrete MOSFETs offering design-to-cost optimization with industry-standard package footprints
- Discrete Schottky Diodes with ultra-low voltage drop for reduced conduction losses
- Bare Die MOSFETs and Diodes for custom, scalable solutions with greater control over package development
- Reference Designs providing customizable blueprints for SiC-based power systems
- Gate Driver Boards maximizing the benefits of SiC technology
- Evaluation Kits streamlining the evaluation stage for power modules and discrete products
- N-type conductive SiC substrates and SiC epitaxy options
- HPSI semi-insulating SiC substrates
- GaN, AlInN, InGaN Epitaxial Layers