Transphorm develops gallium nitride (GaN) transistors and modules for high-voltage power conversion, achieving over 99% efficiency and 40% more power density compared to traditional silicon solutions. The company addresses significant energy losses in power systems by providing the industry's only fully-qualified 650V GaN devices, ensuring unmatched reliability through extensive testing and qualification.
Funding
$7.9M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
Founders
Product
Problem
Power conversion systems using traditional silicon transistors suffer from significant energy losses and size limitations, hindering efficiency and power density. These inefficiencies lead to increased heat generation, larger cooling systems, and higher overall system costs.
Solution
Transphorm provides gallium nitride (GaN) power discretes that improve efficiency in high-voltage power conversion applications. Their GaN FETs achieve over 99% efficiency, 40% more power density, and 20% lower system cost compared to silicon-based solutions. These devices reduce gate charge, lower crossover loss, and minimize reverse recovery charge, leading to smaller, more efficient power systems.
Target Audience
The primary customers are designers and manufacturers of power adapters, power supplies, and other high-voltage power conversion systems seeking to improve efficiency and power density.
Features
- JEDEC- and AEC-Q101-qualified GaN FETs ensuring high reliability
- Lower gate charge, lower crossover loss and smaller reverse recovery charge compared to silicon
- Parametric product selector tool for easy part selection
- Solutions for high efficiency AC/DC adapters with USB Power Delivery (PD)
- GaN devices enabling Zero Standby Power (ZSP) designs