Tessellate 2D

Tessellate2D manufactures atomically perfect monolayer semiconductor crystals using its proprietary Gold‑Stamp™ metal‑stamp process, delivering up to 100× fewer point defects and up to 5× higher carrier mobility than conventional CVD films.

Updated 2 months ago

Funding

Funding not disclosed

Funding rounds are not available yet.

Founders

Founder details are not available yet.

Product

Problem

Current silicon-based semiconductor technology is approaching its physical scaling limits, leading to reduced performance for transistors below ~3 nm and hindering continued adherence to Moore’s Law. Existing 2D material production methods, such as chemical vapor deposition, introduce high densities of point defects that degrade electronic mobility and reliability, limiting their adoption in high‑performance applications.

Solution

Tessellate 2D supplies atomically perfect, monolayer semiconductor crystals that retain high electronic mobility at single‑atom thicknesses, providing a viable path for further transistor scaling. The company’s proprietary metal‑stamp (Gold‑Stamp™) process deterministically isolates individual monolayers from bulk crystals, preserving the intrinsic bulk quality while achieving defect densities up to 100 × lower than conventional CVD films. These single‑crystal monolayers exhibit mobility up to five times greater than typical CVD‑grown 2D films, enabling faster, lower‑power devices. The technology is designed for wafer‑scale production (50–300 mm) through automated exfoliation, making high‑quality 2D semiconductors scalable for industrial semiconductor fabrication. By delivering defect‑free, high‑mobility 2D materials, Tessellate 2D aims to support clean‑energy generation, high‑temperature industrial processes, and electronics for space and extreme environments.

Target Audience

Primary customers are semiconductor manufacturers and device designers seeking ultra‑high‑mobility channel materials, as well as industries such as electric utilities, heavy‑process manufacturing, and aerospace that require robust, low‑defect semiconductor components for clean energy, high‑temperature heat, and extreme‑environment electronics.

Features

Metal‑stamp (Gold‑Stamp™) top‑down isolation of monolayers with atomic‑level precision, yielding 100 × fewer point defects than CVD methods
Preservation of bulk crystal quality, resulting in single‑crystal monolayers with intrinsic high mobility
Reported carrier mobility up to 5 × higher than conventional CVD‑grown 2D films
Automated exfoliation workflow enabling wafer‑scale (50–300 mm) production for volume manufacturing
Compatibility with existing semiconductor fab processes for integration into advanced transistor architectures