Funding
Funding not disclosed
Founders
Product
Problem
The increasing demand for high-performance power semiconductors in electric vehicles and renewable energy systems necessitates advanced materials like silicon carbide (SiC). However, achieving consistent quality and performance in SiC epitaxy is challenging due to complex growth processes and defect control.
Solution
Sico Semi addresses this by specializing in the production of high-quality silicon carbide (SiC) epitaxial wafers. Leveraging proprietary CVD technology and advanced defect control methodologies, the company delivers SiC epitaxy solutions that meet the stringent requirements of the power semiconductor industry. Their focus on process optimization and quality assurance ensures that their wafers provide a robust foundation for high-efficiency power devices. This enables manufacturers to develop next-generation power modules for demanding applications.
Target Audience
The primary customers are power semiconductor manufacturers, particularly those developing devices for electric vehicles, renewable energy systems, and other high-power applications requiring advanced SiC technology.
Features
- Production of 6-inch SiC epitaxial wafers using advanced CVD processes.
- Focus on defect control, including identification and mitigation of crystal defects originating from the substrate and extending into the epitaxial layer.
- Capability to achieve epitaxy quality comparable to international leading manufacturers.
- Development of conductive SiC epitaxy wafers for power semiconductor applications.
- Application of rigorous quality management systems and adherence to quality policies.
- Ongoing research and development in SiC epitaxy, evidenced by patent filings.