Semi Zabala supplies radiation‑hardened GaN HEMT power transistors rated up to 600 V for space and defense applications. The company provides end‑to‑end custom chip design, qualified manufacturing, and a secure portal with datasheets and reliability data to streamline integration into satellite power systems.
Funding
Funding not disclosed
Founders
Product
Problem
Spaceborne power electronics require semiconductor devices that can operate reliably under high radiation levels and extreme thermal cycles. Conventional silicon or low‑voltage GaN components often fail to meet the stringent durability and performance margins needed for long‑duration missions.
Solution
Semi Zabala delivers radiation‑hardened Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) optimized for high‑voltage, high‑efficiency power conversion in space applications. The company provides a full‑stack offering—from custom chip architecture and layout to qualified manufacturing in a space‑grade fab—ensuring each device meets rigorous qualification standards. Their GaN HEMTs achieve up to 600 V breakdown, substantially exceeding typical 200 V offerings, while maintaining low on‑resistance and fast switching speeds. Integrated testing pipelines validate total ionizing dose (TID) tolerance, displacement damage, and thermal cycling, delivering parts that can be directly integrated into satellite power subsystems or defense platforms. Customers access device data sheets, reliability reports, and design‑in support through a secure portal, streamlining the qualification process for mission‑critical hardware.
Target Audience
Primary customers are satellite manufacturers, space system integrators, and defense aerospace firms that require high‑reliability, high‑performance power converters for on‑orbit or mission‑critical platforms.
Features
- GaN HEMT architecture with 600 V rating and high electron mobility for superior power density
- Radiation‑hardening processes qualified for total ionizing dose (TID) up to 10 krad(Si) and displacement damage resistance
- End‑to‑end custom chip design service, including layout optimization, simulation, and mask set generation
- Production in a fully qualified space‑component fab with traceability and lot‑level screening
- Comprehensive qualification flow: burn‑in, thermal‑vacuum cycling, vibration, and radiation testing per ESA/DoD standards
- Low on‑resistance (R<sub>DS(on)</sub>) and fast switching (sub‑nanosecond rise time) to minimize conduction losses
- Secure online portal delivering datasheets, reliability reports, and design‑in guidelines for rapid integration