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RASIRC

RASIRC provides gas delivery systems that convert liquid chemistries into precise and safe gas flows for various processes. Their products, including BRUTE Peroxide and Hydrazine, deliver ultra-dry hydrogen peroxide and hydrazine gas at controlled concentrations. These systems cater to industries like semiconductor, pharmaceutical, and fuel cell, requiring accurate gas delivery.

Founded 2005501K+ followers
Updated 3 months ago

Funding

Funding not disclosed

Funding rounds are not available yet.

Founders

Product

Problem

In advanced semiconductor manufacturing, creating thin films with precise control over composition and thickness is crucial, but traditional methods struggle with low vapor pressure liquid precursors, leading to inconsistent gas delivery and process inefficiencies. Existing techniques often require high temperatures or harsh conditions, which can damage delicate materials and limit the range of applicable chemistries.

Solution

RASIRC provides gas delivery systems that convert low vapor pressure liquid precursors into precise and safe gas flows, enabling the creation of high-quality thin films at reduced temperatures. Their BRUTE product line utilizes a proprietary technology to generate ultra-dry hydrogen peroxide and hydrazine gas at controlled concentrations. The Peroxidizer product line delivers high concentrations of hydrogen peroxide gas for ALD, annealing, and surface preparation. These systems facilitate the growth of thin oxide and nitride films with improved uniformity, reduced contamination, and enhanced electrical performance, even in complex 3D structures.

Target Audience

RASIRC's primary customers are semiconductor manufacturers, microelectronics companies, and research institutions focused on advanced materials processing, thin film deposition, and surface modification.

Features

  • BRUTE Hydrazine: Converts liquid hydrazine into pure, dry hydrazine gas for low-temperature nitride ALD and MOCVD, enabling the creation of titanium nitride, silicon nitride, and aluminum nitride films with low resistivity and minimal oxygen contamination.
  • BRUTE Peroxide: Delivers anhydrous hydrogen peroxide gas, offering a more reactive alternative to ozone and water in ALD applications, facilitating low-temperature, high-quality oxide films and surface preparation for wafer bonding and area-selective deposition.
  • Peroxidizer: Continuously converts liquid hydrogen peroxide into hydrogen peroxide gas, providing a cost-effective solution for high-volume manufacturing (HVM) applications such as gapfill cure, anneal, and atomic layer deposition.
  • ALD Oxide Wizard: A tool to compare the reactivity of water and hydrogen peroxide for 285 different precursors.
  • Enables low-temperature deposition of silicon nitride films with high conformality and a refractive index greater than 1.9 at 350°C without plasma.
  • Facilitates the creation of high-density, low wet-etch-rate (WER) SiN films at operating temperatures below 400°C.
  • Offers a strong reducing agent for surface conditioning and cleaning of various metals.
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