The existing memory market is dominated by DRAM and NAND flash, each with limitations. DRAM is fast but volatile, requiring constant power to retain data, while NAND flash is non-volatile but suffers from slow speeds and limited endurance. This creates a need for a memory solution that combines the advantages of both without their respective drawbacks.

QuInAs Technology's ULTRA RAM™ is a patented memory technology that addresses the limitations of existing memory solutions by delivering non-volatility, high-speed performance, and high endurance. Utilizing quantum-mechanical resonant tunneling in III-V compound semiconductors, ULTRA RAM™ achieves a unique combination of properties. This technology offers the non-volatility of flash memory with performance expected to exceed that of DRAM, while also significantly reducing energy consumption during operation. ULTRA RAM™ aims to fulfill the need for a universal memory that is fast, non-volatile, and has high endurance with ultra-low switching energies.

Non-volatile memory capable of retaining data without power.

High-speed performance expected to exceed DRAM.

High endurance demonstrated by degradation-free operation exceeding 10 million program/erase cycles.

Ultra-low switching energy, with 100x lower switching energy than DRAM and 1,000x lower than flash.

Employs a triple-barrier resonant-tunneling (TBRT) charge-confining structure using atomically-thin layers of InAs/AlSb.

Uses III-V compound semiconductors (GaSb, InAs, and AlSb) instead of silicon.

Offers the potential for high-speed embedded III-V logic.

The primary target audience includes manufacturers of computing devices, data storage solutions, and embedded systems seeking high-performance, low-power, and durable memory solutions.