Odyssey Semiconductor develops vertical gallium nitride (GaN) power switching devices that operate at voltages exceeding 10,000 V, offering higher efficiency and power density compared to traditional silicon carbide solutions. Their technology targets applications in electric vehicles, industrial motors, and energy grids, addressing the need for more efficient power conversion in demanding environments.
Funding
$5M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
Founders
Product
Problem
Existing silicon carbide power solutions lack the efficiency and power density required for demanding applications such as electric vehicles, industrial motors, and energy grids. These limitations hinder the development of more efficient power conversion systems in these sectors.
Solution
Odyssey Semiconductor develops vertical gallium nitride (GaN) power switching devices designed to operate at voltages exceeding 1200 V. Their proprietary GaN processing technology enables vertical conduction, extending the application of GaN power devices beyond consumer electronics. This approach allows for higher conversion efficiency and power density compared to traditional silicon carbide solutions, making it suitable for demanding applications.
Target Audience
The primary target audience includes manufacturers of electric vehicles, industrial electric motors, and energy grid systems seeking more efficient power conversion solutions.
Features
- Vertical GaN architecture enabling operation at voltages from 1,000 V to over 10,000 V
- Low Rds-on Vertical GaN Power Transistor
- Designed for high-efficiency and high-power-density power converters
- Foundry services available for transitioning innovative designs to commercial fabrication
- Capability to work with a variety of materials and substrate dimensions