NoMIS Power supplies silicon‑carbide (SiC) MOSFETs and advanced packaging for high‑power applications. Its devices feature ultra‑low on‑resistance, high dv/dt, and ≥5 µs short‑circuit withstand while operating up to 175 °C, available in TO‑247‑4L and bare‑die formats. The company also offers custom packaging, licensing and co‑development to help OEMs and tier‑1 suppliers integrate SiC solutions into EV, renewable‑energy, aerospace and industrial power converters.
Funding
Funding not disclosed
Founders
Product
Problem
Conventional silicon power devices exhibit high switching losses and limited short‑circuit robustness, which reduces efficiency and reliability in high‑power applications such as electric vehicles, solar inverters, and aerospace power systems. These constraints hinder designers from achieving higher power density and tighter thermal budgets.
Solution
NoMIS Power develops silicon‑carbide (SiC) power semiconductors and advanced packaging architectures that directly address the efficiency and ruggedness gaps of silicon. By leveraging a next‑generation planar unit‑cell design and a thicker‑than‑standard gate oxide, the company delivers MOSFETs with ultra‑low specific on‑resistance, high dv/dt capability, and extended short‑circuit withstand times (≥5 µs) without sacrificing R<sub>on,sp</sub>. The devices operate reliably up to 175 °C and support both standard TO‑247‑4L packages and bare‑die formats, enabling flexible integration into a wide range of converter topologies. Integrated packaging solutions reduce junction‑to‑case thermal capacitance, further improving system efficiency and allowing higher switching frequencies. NoMIS also offers customization, licensing, and regional supply‑chain options to accelerate design‑in and volume production for OEMs and tier‑1 suppliers.
Target Audience
Primary customers are power‑electronics engineers and system integrators in electric‑vehicle drivetrains, renewable‑energy inverters, grid‑scale storage, aerospace electrical power systems, and high‑power industrial drives. The offering also serves tier‑1 component distributors that supply SiC devices to OEMs.
Features
- SiC MOSFET portfolio spanning 1.2 kV, 1.7 kV, and 3.3 kV voltage classes with specific on‑resistance as low as 35 mΩ·cm²
- Proprietary planar unit‑cell architecture delivering low R<sub>on</sub>·C<sub>oss</sub> and high dv/dt performance
- Thick gate‑oxide process that extends short‑circuit withstand time to ≥5 µs while maintaining low R<sub>on,sp</sub>
- Operation up to 175 °C with stable electrical characteristics for passive‑cooled designs
- TO‑247‑4L and bare‑die packaging options, plus custom advanced SiC packaging services
- 100 % avalanche‑tested devices and full SCWT screening for defect‑free reliability
- High‑frequency capability (hundreds of kHz) enabling increased power density in converters
- Licensing and co‑development programs for OEMs requiring tailored SiC solutions