Gene Sheridan
CEO
Navitas Semiconductor
Navitas Semiconductor develops GaN power integrated circuits (ICs) for power supply applications, providing efficient energy conversion for data centers, mobile devices, and electric vehicles. Their technology addresses the need for higher efficiency and reduced size in power systems, enabling a more sustainable energy future.
- Hardware
- Semiconductor
Updated 6 months ago
Funding
Raised to date
$92MRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
Funding rounds are not available yet.
Founders
Product
Problem
Conventional power systems often face limitations in efficiency, size, and thermal management, particularly in high-power and high-frequency applications. Traditional silicon-based power devices struggle to meet the increasing demands for compact, energy-efficient solutions in sectors like data centers, electric vehicles, and mobile devices.
Solution
Navitas Semiconductor provides GaN power ICs and SiC power MOSFETs and Schottky MPS diodes that enhance power conversion efficiency while reducing system size and improving reliability. Their GaNFast power ICs integrate GaN FETs with GaN drive, logic, and protection functions, enabling high-frequency operation and simplified designs. The GeneSiC silicon carbide products offer superior thermal conductivity and high-voltage operation, making them suitable for demanding applications requiring robustness and stability in extreme conditions. By using wide bandgap materials like GaN and SiC, Navitas enables power systems to operate more efficiently, switch faster, and dissipate heat more effectively than traditional silicon-based solutions.
Target Audience
The primary customers include designers and manufacturers of power supplies for mobile devices, consumer electronics, data centers, electric vehicles, solar inverters, and industrial motor drives.
Features
- GaNFast Power ICs: Integrated GaN FET, GaN drive, logic, and protection for high-speed, efficient power conversion.
- GeneSiC MOSFETs and Diodes: Silicon carbide devices for high-voltage, high-temperature applications.
- AllGaN process design kit (PDK): Enables monolithic integration of GaN components.
- QFN Packaging: Industry-standard, low-inductance, low-cost packaging for AC or 400V DC-input applications.
- GaNSense Technology: Integrated autonomous protection features.
- Trench-Assisted Planar Technology: Enhances the performance and reliability of SiC devices.
- MPS Diodes: Merged PiN Schottky diodes with voltage ratings up to 1200 V.
- High-Frequency Operation: GaNFast power ICs fully-rated at 2 MHz.