The startup develops and manufactures resistance-change switching technology for semiconductors, utilizing voltage to control the formation and dissolution of nanometer-sized metal bridges in solid electrolytes. This technology provides clients with low-power, radiation-hardened programmable terminals and nonvolatile memory solutions, addressing the need for efficient and reliable data storage in demanding environments.
Funding
Funding not disclosed
Founders
Product
Problem
Conventional semiconductor memory and switch technologies face limitations in power consumption, radiation resistance, and cost, particularly in demanding environments such as aerospace and IoT devices operating in extreme conditions. Existing solutions often require complex manufacturing processes and are susceptible to data loss or malfunction in the presence of radiation.
Solution
NanoBridge Semiconductor provides a resistance-change switching technology that utilizes voltage to control the formation and dissolution of nanometer-sized metal bridges in a solid electrolyte. This technology enables the creation of low-power, radiation-hardened programmable terminals and non-volatile memory (NVM) solutions. Their NanoBridge Field-Programmable Gate Arrays (NBFPGA) and NanoBridge Nonvolatile Memory (NBNVM) offer a cost-effective alternative to traditional CMOS-based solutions, requiring only two additional masks in the standard CMOS process without changes to the process design kit (PDK). The technology's physical connection via a metal bridge provides inherent radiation resistance and temperature stability, making it suitable for harsh environments.
Target Audience
The primary target audience includes semiconductor companies seeking to enhance their products with low-power, radiation-hardened, and programmable solutions, as well as end-users in the aerospace, IoT, and AIoT sectors requiring reliable memory and switching technologies for demanding applications.
Features
- Employs a polymer solid-electrolyte (PSE) between inert Ruthenium (Ru) and active Copper (Cu) electrodes for switching.
- Achieves low-resistive ON-state by applying positive voltage, forming a Cu bridge, and high-resistive OFF-state by applying negative voltage, rupturing the Cu bridge.
- Offers non-volatility, maintaining ON/OFF states without continuous power.
- Features lower input capacitance and higher OFF/ON resistance ratio compared to conventional CMOS switches.
- Provides radiation hardness due to the physical connection of the metal bridge, making it suitable for space applications.
- Demonstrates temperature stability, maintaining performance from -50°C to 150°C.
- Enables low-cost manufacturing with only two additional masks required in standard CMOS processes.
- Offers both NBFPGA and NBNVM solutions for flexible and efficient data storage and signal routing.