Falcomm designs high‑efficiency power amplifiers using its patented Dual‑Drive™ architecture, delivering up to 54% PAE and significantly more RF output across sub‑GHz to mmWave frequencies while minimizing heat, weight, and power consumption. The company offers a turn‑key portfolio—from CMOS and GaN RFICs to custom front‑end modules—with in‑house testing and high‑volume manufacturing, targeting satellite, telecom, and defense applications that demand compact, low‑power RF front‑ends.
Funding
Funding not disclosed
Founders
Product
Problem
RF and mmWave systems for satellite, telecom, and defense applications require power amplifiers that deliver high output power while minimizing heat, weight, and energy consumption. Conventional amplifiers often suffer from low efficiency, large thermal management needs, and limited bandwidth, leading to higher launch costs and reduced system performance.
Solution
Falcomm provides high‑efficiency power amplifiers built on its patented Dual‑Drive™ architecture, which combines process‑agnostic design with advanced biasing to achieve world‑record efficiency across sub‑GHz to mmWave frequencies. The company offers a full turn‑key portfolio ranging from mass‑produced CMOS and GaN RFICs to custom front‑end modules, all validated in‑house with RF testing up to 150 GHz. By delivering more RF output per watt, Falcomm’s amplifiers reduce battery size, cooling requirements, and overall system weight, extending run‑time and lowering launch and operational costs for mission‑critical platforms. The solutions are supported by in‑house prototyping, 3D EM package simulation, and high‑volume manufacturing through OSAT partners, ensuring rapid qualification and scalable production.
Target Audience
Primary customers are satellite communication providers, telecom equipment manufacturers, and defense contractors that require high‑performance, low‑power RF front‑ends for space‑qualified or mission‑critical systems.
Features
- Dual‑Drive™ PA architecture delivering up to 54% PAE and up to 70% more RF output power compared to conventional designs
- Wide frequency coverage from 8 GHz to 44 GHz with both CMOS and GaN process options
- Integrated 50 Ω input/output matching and frequency‑agnostic design flow accurate within 2 % of measured performance
- Compact QFN and bare‑die packages that reduce silicon footprint, weight, and thermal load
- In‑house RF measurement lab supporting CW, modulation, and VSWR testing from DC to 150 GHz
- Full turn‑key services: custom IC design, 3D EM packaging, prototype assembly, and high‑volume OSAT manufacturing (10 k–10 M units)
- Mil‑Spec up‑screening and space‑qualification capabilities for defense and satellite applications