Mivium develops advanced semiconductor materials, focusing on next-generation wide bandgap platforms like Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN). The company utilizes a patented process to produce high-quality GaN particles and substrates at scale using sustainable manufacturing methods. This technology addresses the limitations of traditional silicon platforms for applications in 5G/6G, EV infrastructure, and AI.
Funding
$6.3M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
Founders
Product
Problem
Current silicon (Si) and gallium arsenide (GaAs) semiconductor platforms are reaching their performance limits, hindering advancements in 5G/6G, electric vehicle (EV) infrastructure, artificial intelligence (AI), and space exploration. Traditional semiconductor manufacturing processes also pose significant environmental concerns due to their toxicity and pollution.
Solution
Mivium develops next-generation semiconductor materials based on gallium nitride (GaN) and aluminum gallium nitride (AlGaN) to replace outdated silicon and gallium arsenide platforms. Their patented manufacturing process produces high-quality GaN particles and substrates with zero carbon emissions, addressing the environmental impact of traditional semiconductor production. Mivium's GaN-based solutions enable higher switching frequencies, improved power conversion efficiency, and miniaturization of passive components in power systems. The materials can be used in spintronics, spin transistors and quantum computers. The company's materials also support advancements in autonomous driving, wireless charging, medical devices, and RF communications.
Target Audience
Mivium's primary customers include manufacturers in the computing, autonomous EV & power, biotech, photonics, and RF communications industries seeking advanced semiconductor materials for next-generation devices.
Features
- Patented manufacturing process for high-quality GaN particles and substrates
- Zero carbon emission manufacturing process, eliminating solvents, acids, contaminants, hydrocarbons, toxins, pollution, and radiation
- GaN-based materials enable higher switching frequencies in power electronics
- High Electron Mobility Transistors (HEMT) allow for higher power density and conversion efficiency
- Materials suitable for spintronics, spin transistors, and quantum computing applications
- Potential for use in mini/micro LED displays with higher resolution and lower power consumption
- GaN-based UV detectors for ozone monitoring, mercury lamp disinfection monitoring, and pollution monitoring