Lace Lithography offers a Beyond‑EUV atom lithography system that uses focused neutral‑atom beams to pattern semiconductor wafers with sub‑nanometer precision, surpassing the 13.5 nm limit of traditional EUV. The platform combines high‑flux atom sources, magnetic optics, and in‑situ metrology to deliver wafer‑scale throughput compatible with existing fab lines, enabling chipmakers to continue scaling logic and memory nodes.
Funding
$60M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
DFMS+3Founders
Product
Problem
Current semiconductor manufacturing relies on extreme ultraviolet (EUV) lithography, which is approaching physical and economic limits that restrict further scaling of transistor dimensions. As feature sizes approach the wavelength limits of light, continuing Moore’s Law becomes increasingly costly and technically challenging for chipmakers.
Solution
Lace Lithography develops Beyond‑EUV (BEUV) atom lithography systems that replace photons with focused beams of neutral atoms to pattern semiconductor wafers. By exploiting the much shorter de Broglie wavelength of atoms, the technology can define features well below the 13.5 nm EUV limit, enabling a new generation of ultra‑dense chips. The BEUV platform integrates a high‑flux atom source, precision beam optics, and real‑time metrology to deliver industrial‑scale throughput compatible with existing fab infrastructure. This approach aims to extend Moore’s Law by a decade, supporting the production of quantum‑grade and advanced logic devices at commercial volumes.
Target Audience
Primary customers are semiconductor manufacturers and foundries seeking to continue scaling logic and memory nodes beyond the limits of EUV lithography, as well as research labs developing quantum‑grade devices that require ultra‑fine patterning.
Features
- Neutral‑atom beam generation with controllable kinetic energy for sub‑nanometer patterning precision
- Advanced atom optics (magnetic lenses and diffraction gratings) that focus and steer the beam with nanometer‑scale accuracy
- In‑situ metrology and feedback loops to monitor pattern fidelity and correct drift during exposure
- Modular tool design that can be retrofitted into standard clean‑room environments and integrated with existing track‑to‑track processes
- Scalable high‑throughput architecture delivering wafer‑level throughput comparable to current EUV tools
- Software stack for pattern data translation, beam control, and defect inspection tailored to atom‑based exposure