Kubos Semiconductors develops a proprietary Cubic GaN growth process to produce high-efficiency, low-cost LEDs and microLEDs, significantly improving performance in the green, amber, and red wavelengths. This technology addresses the limitations of conventional GaN LEDs, enabling scalable production and reduced energy consumption for a variety of applications, including displays and general lighting.
Funding
$3.9M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
Founders
Product
Problem
Conventional Gallium Nitride (GaN) LEDs suffer from efficiency limitations, particularly in the green, amber, and red wavelengths, hindering the development of high-performance, full-color displays and efficient solid-state lighting. Current manufacturing processes often require different materials for red, green, and blue LEDs, increasing complexity and cost.
Solution
Kubos Semiconductors has developed a proprietary Cubic GaN growth process that enables the production of high-efficiency LEDs and microLEDs, especially in the green, amber, and red spectrum. This technology overcomes the limitations of traditional hexagonal GaN, allowing for improved performance and scalable production. By using the cubic crystal phase of GaN, Kubos can achieve higher efficiencies at longer wavelengths, enabling the fabrication of RGB devices using the same substrate material. The Cubic GaN technology is fully compatible with standard industry manufacturing equipment and processes, facilitating seamless integration and reducing manufacturing costs.
Target Audience
The primary target audience includes manufacturers of displays (AR/VR headsets, TVs), general lighting solutions, and visible light communication systems seeking higher efficiency and lower costs.
Features
- Improved efficiency at longer wavelengths (green, amber, and red) compared to standard hexagonal GaN LEDs
- Fully compatible with standard MOCVD production tools
- Scalable to large diameter wafers (currently 150mm, with potential for 200mm and beyond)
- Low-cost silicon (001) CMOS substrate with a thin layer of 3c-SiC
- Eliminates Quantum-Confined Stark Effect (QCSE)
- Reduced spectral drift (blue shift) with drive current
- Faster switching speeds for applications like Visible Light Communications (LiFi)
- Reduced current droop