
Invisix Measuring Systems
Invisix Measuring Systems provides soft x-ray metrology systems that let chipmakers measure 3D structures in next-generation semiconductors where visible light falls short. Its closed pipeline—from a laser-like soft x-ray source to 3D profile reconstruction—enables inline process control for GAA, CFET, and 4F2 DRAM manufacturing, inferring more than 4x more parameters than optical critical dimension tools.
- Semiconductor
- Manufacturing / Industry 4.0
- Hardware
- Industrial Automation
Funding
Funding not disclosed

Founders
Founder details are not available yet.
Product
Problem
As transistors shrink and device architectures become three-dimensional, visible light can no longer resolve the internal structures that determine chip performance and yield. Conventional optical metrology techniques see only averages and lack the resolution needed to measure individual nanosheets, gate-all-around (GAA) and CFET geometries, or critical etch and deposition steps.
Solution
Invisix Measuring Systems extends metrology into the soft x-ray regime, matching illumination wavelength to the true scale of advanced semiconductor structures. The company provides a single, closed pipeline from photon to process-control signal, built for high-volume manufacturing. Its system illuminates wafers with a laser-like soft x-ray source, reconstructs detailed 3D device geometries from diffracted light at high throughput, and feeds results back into the fab for process control and yield improvement. This enables simultaneous measurement of far more parameters than visible-light tools and dramatically reduces calibration demand due to increased signal information content.
Target Audience
Primary customers are semiconductor manufacturers producing advanced logic and DRAM devices, specifically process integration and metrology teams at leading-edge fabs that need inline 3D profile and overlay control for GAA, CFET, and 4F2 DRAM process flows.
Features
- Soft x-ray light source with wavelength range matched to device scale, yielding information-rich diffraction signals
- 3D profile reconstruction for GAA and CFET devices, inferring more than 4x more parameters than optical critical dimension (OCD) metrology
- Ability to measure individual nanosheets where visible light only sees averages, enabling control of lateral timed etch and 3D conformal deposition
- Device pitch overlay measurement on product unit cells after develop or after etch, eliminating the need for separate overlay targets and mark-to-device offsets
- Simultaneous measurement of multiple overlays, enabling real-estate reuse in the fab
- High-throughput operation designed for online process control in high-volume manufacturing environments