Inversion Semiconductor builds a compact particle‑accelerator‑based lithography platform that generates tunable 13.5 nm EUV light. The miniaturized accelerator delivers a high‑power source that triples scanner throughput, improves critical‑dimension uniformity by over 25 %, and enables a 100 % increase in transistor density for existing lithography equipment. This technology targets semiconductor manufacturers seeking higher‑density, high‑aspect‑ratio chips for advanced logic, memory, and emerging quantum or reversible computing applications.
Funding
$500K raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
1OFounders
Product
Problem
Current semiconductor lithography tools are limited by the size and power of conventional light sources, restricting throughput and the ability to achieve the critical dimensions needed for next‑generation transistor scaling. This bottleneck hampers the production of higher‑density chips and novel architectures such as quantum or reversible computing.
Solution
Inversion Semiconductor is developing a compact particle‑accelerator‑based lithography platform that generates tunable extreme‑ultraviolet (EUV) light at 13.5 nm. By shrinking accelerator technology 1,000×, the system delivers a high‑power light source capable of three times the throughput of existing scanners while improving critical‑dimension uniformity by over 25 %. The platform enables a 100 % increase in transistor density for a given numerical aperture, supporting the fabrication of high‑aspect‑ratio features required for advanced transistor designs and emerging compute paradigms.
Target Audience
Primary customers are semiconductor manufacturers and fab facilities seeking to increase transistor density and throughput for advanced logic, memory, and emerging quantum or reversible computing chips.
Features
- Miniaturized particle accelerator producing EUV photons at the industry‑standard 13.5 nm wavelength
- High‑power light generation that triples scanner throughput and can drive multiple lithography tools simultaneously
- Tunable wavelength capability to optimize exposure for various photoresist chemistries and feature sizes
- Enhanced critical‑dimension uniformity (>25 % improvement) for reliable patterning of high‑aspect‑ratio structures
- Scalable architecture designed to integrate with existing lithography equipment and process flows