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Ideal Semiconductor Devices

iDEAL Semiconductor develops SuperQ™, a power device technology that enhances energy efficiency by reducing resistance in MOSFETs and diodes, achieving up to 95% lower inverter loss compared to traditional silicon solutions. This technology addresses the high energy loss in electronic devices, enabling greener and more sustainable power management across various applications.

Bethlehem, South AfricaFounded 2017421K+ followers
Updated 4 months ago

Funding

$76.6M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.

Funding rounds are not available yet.

Founders

Founder details are not available yet.

Product

Problem

Electronic devices experience significant energy loss due to resistance in power components like MOSFETs and diodes, hindering overall energy efficiency. Traditional silicon-based solutions struggle to minimize these losses, leading to increased energy consumption and environmental impact.

Solution

iDEAL Semiconductor's SuperQ™ technology reduces resistance in MOSFETs and diodes, leading to significantly lower inverter loss compared to conventional silicon solutions. By increasing the conduction area and reducing resistance, SuperQ™ enhances energy efficiency across various applications. The technology is built on silicon, leveraging existing manufacturing infrastructure for scalability and cost-effectiveness. SuperQ™ can be applied to diodes, MOSFETs, IGBTs, and Power ICs, and is compatible with both silicon and future materials.

Target Audience

The primary target audience includes manufacturers of power electronics, electric vehicles, renewable energy systems, and industrial equipment seeking to improve energy efficiency and reduce power loss in their products.

Features

  • Up to 95% lower inverter loss compared to traditional silicon solutions.
  • 6X lower resistance in MOSFETs compared to leading competitors.
  • 1.6X lower resistance in MOSFETs compared to leading Gallium Nitride devices.
  • 55% larger conduction area compared to SuperJunction structures.
  • 46% reduction in inverter loss compared to leading silicon MOSFET driving a 36 HP motor.
  • Built on silicon, utilizing existing semiconductor manufacturing capacity.
  • Applicable to diodes, MOSFETs, IGBTs, and Power ICs.
  • Compatible with silicon and future materials.
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