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HallTech

HallTech develops advanced Physical Vapor Deposition (PVD) technology focused on achieving high quality and throughput cost-effectively. This technology is applied across various sectors, including ultra-hard coatings, thin film solar cells, solid-state batteries, and hydrogen electrolyzers. The company provides a new PVD solution that optimizes performance metrics without compromising production efficiency.

Eindhoven, Netherlands2300+ followers
Updated 2 months ago

Funding

Funding not disclosed

Funding rounds are not available yet.

Founders

Product

Problem

Conventional Physical Vapor Deposition (PVD) methods present a trade-off between coating quality and throughput, with magnetron sputtering sacrificing quality for speed and high vacuum ion beam sputtering (IBS) sacrificing speed for quality. This limits the cost-effectiveness and scalability of advanced PVD processes for emerging material science and energy applications.

Solution

HallTech has developed an enhanced PVD technology that significantly increases the throughput of high vacuum ion beam sputtering while maintaining superior coating quality. This innovation addresses the inherent limitations of existing PVD techniques, enabling cost-effective and energy-efficient deposition for demanding applications. The process allows for the deposition of high-density or high-crystallinity coatings on substrates at lower temperatures and without the need for external bias, even on insulating or thick materials. This makes HallTech's PVD solution particularly advantageous for applications where traditional methods are not viable.

Target Audience

HallTech targets manufacturers and researchers in sectors such as ultra-hard coatings, solar cells (perovskite and thin-film silicon), solid-state batteries, and hydrogen electrolyzers.

Features

  • High-throughput ion beam sputtering (IBS) technology that matches semiconductor-grade quality.
  • Enables deposition of high-density and/or high-crystallinity coatings on cold substrates.
  • Facilitates coating on insulating or thick substrates without requiring external bias or plasma sheath bias.
  • Achieves 10x lower energy consumption per kilogram of sputtered material compared to magnetron sputtering.
  • Maximizes target material utilization and sputtering yield.
  • Demonstrates over 10x lower Argon consumption per kilogram of material moved compared to magnetron sputtering.
  • Optimized for insulating material coatings and sputtering targets where conventional methods are not applicable.
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