GeQD develops a germanium‑on‑silicon single‑photon avalanche diode (SPAD) platform that delivers true single‑photon sensitivity from roughly 600 nm to 1550 nm while operating at room temperature.
Funding
Funding not disclosed
Founders
Product
Problem
Single-photon detectors that cover both visible and short‑wave infrared wavelengths typically require cryogenic cooling, are expensive, or cannot be manufactured in large arrays, limiting the scalability of quantum imaging, sensing, and photonic test systems.
Solution
GeQD offers a germanium‑on‑silicon single‑photon avalanche diode (SPAD) platform that operates at room temperature across a continuous 600–1550 nm spectral range. By using a CMOS‑compatible process, the detectors can be fabricated in standard silicon foundries, enabling high‑volume, low‑cost production and easy integration with existing photonic circuits. The technology provides true single‑photon sensitivity without the need for specialized cooling hardware, simplifying system design and reducing overall system cost. This combination of broad wavelength coverage, ambient operation, and scalable manufacturing addresses the key limitations of current silicon and InGaAs SPAD solutions.
Target Audience
Primary customers are developers of quantum imaging and sensing equipment, manufacturers of photonic test and measurement systems, and OEMs requiring scalable single‑photon detectors for visible to SWIR applications.
Features
- Germanium‑on‑silicon SPAD architecture delivering single‑photon detection from visible (≈600 nm) to SWIR (≈1550 nm)
- Room‑temperature operation eliminates cryogenic cooling requirements
- Fully CMOS‑compatible fabrication using established silicon foundry flows for high‑volume, low‑cost production
- Potential for large‑scale detector arrays, supporting high‑resolution imaging and parallel sensing applications
- Integrated with standard silicon photonic platforms, facilitating seamless system integration