Gallox Semiconductors develops gallium oxide (Ga2O3) devices that significantly enhance power conversion efficiency by reducing energy waste and minimizing system size and complexity. This technology addresses the inefficiencies in current power electronics, which waste nearly as much energy as the global aviation industry consumes.
Funding
Funding not disclosed
Founders
Product
Problem
Inefficient power conversion processes result in significant energy waste, rivaling the energy consumption of the global aviation industry, and this waste is projected to triple with increasing electrification. Current power electronics technologies struggle to minimize energy loss and system complexity.
Solution
Gallox Semiconductors develops gallium oxide (Ga2O3) semiconductor devices designed to enhance power conversion efficiency. Their ultrawide bandgap technology reduces energy waste, enables more powerful electronics circuitry, and minimizes system size, weight, and engineering complexity. Gallox addresses key challenges in Ga2O3 manufacturing, including producing thinner dies, ensuring reliable production at larger wafer sizes, and improving thermal management. The company's vertical topology enables more devices per wafer and facilitates novel engineering solutions for thermal and electric field management.
Target Audience
Gallox Semiconductors targets industries including data centers, electric vehicle (EV) charging infrastructure, drones and aircraft, and satellites.
Features
- Ultrawide bandgap gallium oxide (Ga2O3) semiconductor material
- Vertical diodes and transistors for increased device density per wafer
- Higher current density Ga2O3 transistors
- Larger peak voltage capacity compared to silicon carbide and silicon diodes
- More efficient power conversion, reducing electricity waste and heat generation
- Smaller device size, reducing total resistance and conduction loss
- Higher power density, reducing system size and complexity
- Higher operating frequencies, enabling smaller and lighter capacitors and inductors
- Rugged design for operation in harsh environments
- Lower device cost compared to silicon carbide (SiC) based devices