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Guerrilla RF

Guerrilla RF designs and manufactures high-performance RF components, specializing in GaN-on-SiC technology for demanding wireless applications. They offer power amplifiers, low-noise amplifiers, and digital step attenuators that enhance network performance and signal integrity in sectors like 5G infrastructure and defense.

Greensboro, United StatesFounded 2013612K+ followers
Updated 4 months ago

Funding

$5M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.

Funding rounds are not available yet.

Founders

Product

Problem

The increasing demand for higher bandwidth and faster data rates in wireless communication systems necessitates advanced radio frequency (RF) components. Developing and manufacturing these components, particularly those utilizing Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology, requires specialized expertise and infrastructure. This creates a challenge for system designers and manufacturers seeking high-performance, reliable RF solutions for demanding applications.

Solution

Guerrilla RF designs and manufactures a comprehensive portfolio of high-performance RF components, with a particular focus on GaN-on-SiC technology. The company offers a range of power amplifiers (PAs), low-noise amplifiers (LNAs), digital step attenuators (DSAs), and other integrated circuits. These products are engineered to meet the stringent requirements of modern wireless infrastructure, satellite communications, military radar, and electronic warfare systems. By providing these advanced RF solutions, Guerrilla RF enables its customers to enhance network performance, improve signal integrity, and achieve greater operational efficiency in their respective applications.

Target Audience

The primary customers are engineers and product developers in the telecommunications, defense, aerospace, and test and measurement industries who require high-performance RF components for their system designs.

Features

  • GaN-on-SiC power amplifiers (PAs) and transistors offering output power ranging from 5W to 600W.
  • Wide operating frequency range from near-DC to X-band (up to 12 GHz for some products).
  • Products available in both bare die and packaged forms, including QFN, DFN, ACC, and LGA packages.
  • Digital Step Attenuators (DSAs) with high attenuation ranges (e.g., 31.75 dB) and fine step sizes (e.g., 0.25 dB).
  • Low-noise amplifiers (LNAs) with ultra-low noise figures (as low as 0.65 dB) and high gain.
  • Amplifiers with bypass functionality for signal path flexibility.
  • Products designed for demanding applications such as 5G infrastructure, satellite communications, military radar, electronic warfare, ISM industrial heating, and test & measurement.
  • Commitment to quality with ISO 9001:2015 certification.
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