FG
FSB-GaN
The startup develops a GaN substrate that enables infinite reuse of parent wafers and facilitates rapid layer release, allowing for the cost-effective production of large-area direct bandgap semiconductors used in light-emitting diodes. Their two-dimensional material-based layer transfer technology supports epitaxial growth on graphene, enabling the production of high-quality single crystalline semiconductors on various host substrates.
- Hardware
- Semiconductor
Updated 21 months ago
Funding
Raised to date
$310KRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
Funding rounds are not available yet.
Founders
Founder details are not available yet.
Product
Features
- The startup develops a GaN substrate that enables infinite reuse of parent wafers and facilitates rapid layer release, allowing for the cost-effective production of large-area direct bandgap semiconductors used in light-emitting diodes. Their two-dimensional material-based layer transfer technology supports epitaxial growth on graphene, enabling the production of high-quality single crystalline semiconductors on various host substrates.