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EpinovaTech AB

The startup develops silicon chip technology that reinforces silicon wafers at the nanoscale and applies a gallium nitride coating, enhancing semiconductor performance. This process enables chip manufacturers to produce microchips with improved speed, reduced size, and lower power consumption.

Lund, Sweden · HQ
Founded 20194200+ followers
  • Semiconductor
Updated 20 months ago

Funding

Raised to date

$480KRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.

Gaeu VenturesNo round attributed
GreenbridgeNo round attributed
Funding rounds are not available yet.

Founders

1 founder

Martin Olsson

Revolutionizing electronics with GaN technology

Product

Problem

Current silicon and silicon carbide power devices face limitations in efficiency, switching speed, and power density, hindering advancements in electric vehicles, AI data centers, and other high-performance applications. The high cost of silicon carbide also presents a barrier to widespread adoption.

Solution

EpinovaTech's NovaGaN® technology enables the production of gallium nitride (GaN) power devices on standard silicon wafers, delivering superior performance at a lower cost compared to silicon carbide. By utilizing a patented nanopillar architecture, NovaGaN® reduces crystal defects, allowing for thinner epitaxy, better yield, and higher voltage capability. This results in devices with higher efficiency, faster switching speeds, and greater power density, facilitating smaller, lighter, and more efficient power systems. EpinovaTech operates on a fabless model, licensing its technology to foundries and semiconductor manufacturers.

Target Audience

EpinovaTech's target audience includes foundries and integrated device manufacturers (IDMs) seeking to enhance their GaN offerings, as well as companies in the automotive, AI, and renewable energy sectors.

Features

  • Patented nanopillar architecture for growing GaN on silicon wafers
  • Vertical GaN devices on 8-inch silicon wafers
  • Significantly lower system cost compared to silicon carbide
  • Higher power density compared to silicon carbide and legacy silicon
  • Compatible with standard semiconductor manufacturing tools
  • Higher efficiency and faster switching speeds than silicon
  • Enables smaller, lighter, and more compact system designs
This profile is AI-generated and may contain inaccuracies.