Eneira creates semiconductor‑compatible magnetic materials and wafer‑level integration platforms that embed thin‑film inductors directly into CMOS and wide‑bandgap (GaN) processes. By delivering high‑frequency, high‑density power components—such as 1000 nJ/mm³ inductors with a figure‑of‑merit up to 4000 nH/Ω—they enable more compact power delivery for high‑performance compute, AI, and aerospace applications.
Funding
Funding not disclosed
Founders
Product
Problem
Power‑dense computing, AI accelerators, and aerospace systems require inductors and other magnetic components that can operate at high frequencies while occupying minimal silicon area. Conventional discrete magnetics add parasitic losses, increase board complexity, and cannot be co‑fabricated with advanced CMOS or wide‑bandgap (GaN) processes, limiting scaling of power delivery architectures.
Solution
Eneira provides a semiconductor‑compatible magnetic platform that integrates thin‑film inductors and other magnetics directly into CMOS and GaN wafers. The company’s proprietary electroplated alloy materials achieve energy densities of 1000 nJ/mm³ and figures of merit up to 4000 nH/Ω, enabling high‑frequency, high‑density power components. By offering wafer‑level process modules, Eneira allows chip designers to embed magnetic functionality during standard semiconductor fabrication, eliminating the need for separate discrete parts. The platform supports pilot fabrication, device co‑design, and joint‑development agreements to accelerate technology transfer into production. This integration reduces parasitic losses, shortens supply‑chain lead times, and opens new design space for next‑generation power management in high‑performance compute, AI, and aerospace applications.
Target Audience
Primary customers are semiconductor manufacturers and design houses developing high‑performance compute, AI accelerators, and aerospace power electronics that require on‑chip magnetic components for dense, high‑frequency power delivery.
Features
- Proprietary high‑frequency electroplated magnetic alloys delivering 1000 nJ/mm³ inductors with up to 4000 nH/Ω FOM
- Wafer‑level thin‑film magnetic integration compatible with standard CMOS and GaN process flows
- Scalable process modules that embed inductors, transformers, and other magnetics directly on silicon
- Pilot services for proof‑of‑concept fabrication and device co‑design to validate performance early
- Technology transfer pathways via strategic joint‑development agreements for volume production
- Loss‑suppression engineered material systems to minimize core and eddy‑current losses at GHz frequencies