Endurance Semiconductors produces 3C‑SiC‑on‑Silicon power devices that deliver wide‑bandgap efficiency comparable to traditional silicon‑carbide switches while using low‑cost, high‑volume silicon manufacturing. By integrating cubic silicon carbide directly on silicon wafers, their devices achieve over 95% conversion efficiency and cut system power losses by up to 50%, enabling higher switching frequencies, greater power density, and reduced cooling requirements for AI data‑center, electric‑vehicle, and renewable‑energy applications.
Funding
Funding not disclosed
Founders
Product
Problem
Power conversion in AI data centers, electric vehicles, and renewable energy systems suffers significant energy loss due to inefficiencies in silicon IGBTs and the dead‑time losses of current SiC and GaN switches, limiting power density, cooling efficiency, and overall carbon footprint.
Solution
Endurance Semiconductors offers 3C‑SiC‑on‑Silicon power devices that combine the wide‑bandgap efficiency of silicon carbide with the low‑cost, high‑volume manufacturing of standard silicon wafers. By growing cubic silicon carbide directly on silicon substrates, the company eliminates the need for expensive SiC crystals while delivering >95% conversion efficiency and reduced heat generation. The technology enables tighter integration of Schottky diodes with SiC and GaN switches, cutting power losses by up to 50% and allowing higher switching frequencies without the typical dead‑time penalties. This results in higher power density, lower cooling requirements, and a reduced carbon footprint for demanding power‑electronics applications.
Target Audience
Primary customers are OEMs and system designers of AI data‑center power supplies, electric‑vehicle powertrains, and renewable‑energy inverters seeking high‑efficiency, high‑density power conversion solutions.
Features
- 3C‑SiC‑on‑Silicon wafers fabricated on standard silicon, leveraging existing silicon fab infrastructure
- Wide‑bandgap performance comparable to traditional SiC devices with superior thermal handling
- Integrated 3C‑SiC Schottky diodes that minimize dead‑time losses in SiC and GaN switch topologies
- Enables >95% power conversion efficiency and up to 50% reduction in overall system losses
- Supports higher switching frequencies, increasing power density and reducing cooling system size
- Scalable, cost‑effective manufacturing reduces material cost and carbon emissions