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ElFys

ElFys designs and manufactures photodetectors utilizing Black Silicon Induced Junction technology, which achieves over 100% quantum efficiency in ultraviolet light detection and enhanced photosensitivity across a wide spectral range. Their products address the need for high-precision light measurement in applications such as health monitoring and spectroscopy, providing superior performance with low dark current and compact packaging.

Espoo, FinlandFounded 2017182K+ followers
Updated 20 months ago

Funding

$8M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.

SV
Funding rounds are not available yet.

Founders

Product

Problem

Many existing photodetectors struggle to efficiently capture light, particularly in the ultraviolet spectrum and at wide angles, limiting the performance of applications requiring precise light measurement. This can lead to inaccurate data and reduced efficiency in health monitoring, spectroscopy, and other light-sensing applications.

Solution

ElFys designs and manufactures photodetectors utilizing Black Silicon Induced Junction technology to achieve enhanced photosensitivity across a broad spectrum, including over 100% quantum efficiency in the ultraviolet range. Their photodetectors offer superior performance with low dark current and are available in compact packages. ElFys provides standard photodiodes as well as customized solutions tailored to specific application needs, including tailored photodetector chip design and customized packaging. The company's Black Silicon technology enables nearly ideal photoresponse, with high absorbance at ultra-wide sensing angles up to 60 degrees. ElFys also offers intellectual property licensing solutions to maximize the value of IP assets.

Target Audience

ElFys serves customers in health monitoring, spectroscopy, analytical instruments, space and defense, and other industries requiring high-precision light detection.

Features

  • Black Silicon Induced Junction technology for enhanced photosensitivity
  • High quantum efficiency, exceeding 100% in the ultraviolet spectrum
  • Wide spectral range photoresponse from 200 to 950 nm
  • Low dark current for improved signal-to-noise ratio
  • Standard product lines: PD, SM and QPD
  • Custom design and processing services for tailored solutions
  • High absorbance at ultra-wide sensing angles up to 60°
  • Available in TO-can and SMD packages
This profile is AI-generated and may contain inaccuracies.