High-Tech Electrics supplies gallium nitride (GaN) power semiconductors and DC‑DC converters that boost power density and thermal performance in electronic systems. Their GaN devices deliver higher switching speeds and superior thermal conductivity, enabling more efficient power management for renewable‑energy and industrial applications.
Funding
Funding not disclosed
Founders
Product
Problem
Electronic systems in renewable‑energy and industrial applications often suffer from limited power density and poor thermal performance due to the constraints of silicon‑based power semiconductors. These limitations lead to larger, less efficient DC‑DC converters and higher cooling requirements.
Solution
High‑Tech Electrics offers gallium nitride (GaN) power semiconductors and DC‑DC converter modules that replace traditional silicon MOSFETs. GaN’s wide band‑gap material provides higher switching speeds and superior thermal conductivity, enabling significantly higher power density in compact form factors. The resulting converters operate more efficiently, generate less heat, and reduce the need for extensive thermal management. By integrating these GaN devices, system designers can achieve lighter, smaller, and more reliable power solutions for renewable‑energy installations and industrial equipment.
Target Audience
Primary customers are OEMs and system integrators developing renewable‑energy inverters, industrial power supplies, and high‑performance electronic equipment that require compact, efficient power conversion.
Features
- GaN power transistors with switching frequencies up to several megahertz for rapid energy transfer
- Integrated DC‑DC converter designs that achieve up to 30% higher power density versus silicon equivalents
- Enhanced thermal performance through superior heat dissipation, reducing cooling system size
- Low on‑resistance and fast turn‑on/off characteristics that improve overall conversion efficiency
- Compatibility with standard PCB footprints and existing power‑management architectures