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D2

Destination 2D

This company develops chip design and nanotechnology equipment that integrates graphene into CMOS technology for next-generation ICs. Their energy-efficient electronics offer higher current-carrying capacity and simplified manufacturing compared to traditional methods, enabling continued IC scaling.

Milpitas, United StatesFounded 20215300+ followers
Updated 3 months ago

Funding

Funding not disclosed

Funding rounds are not available yet.

Founders

Product

Problem

As integrated circuit (IC) feature sizes continue to shrink, traditional interconnect materials face limitations in current-carrying capacity and energy efficiency, hindering further IC scaling. Existing manufacturing methods also present challenges in creating high-performance interconnects at advanced technology nodes.

Solution

Destination 2D develops equipment and processes for integrating graphene into CMOS technology, enabling next-generation ICs with improved energy efficiency and current-carrying capacity. Their approach simplifies manufacturing by providing a back-end-of-line (BEOL) compatible method for growing multilayer graphene (MLG) directly on wafers. This transfer-free process ensures high-quality, uniform graphene layers at wafer scale, facilitating the creation of low-resistance interconnects and via structures. Destination 2D's technology overcomes limitations of traditional interconnects, allowing for continued IC scaling and enhanced device performance.

Target Audience

The primary target audience includes semiconductor manufacturers and foundries seeking to enhance IC performance through advanced interconnect technology, as well as research institutions focused on nanotechnology and advanced materials.

Features

  • Graphene synthesis tool compatible with 300mm wafers and BEOL processes
  • Low-temperature (< 400C) multilayer graphene (MLG) growth method
  • Transfer-free MLG growth for high-quality and uniform graphene layers at wafer scale
  • Unique material stack for MLG growth process optimization
  • MLG doping methods and tools utilizing BEOL-compatible intercalation doping
  • MLG interconnect and via structures with multi-level configurations and low-resistance edge contacts
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