Cambridge GaN Devices develops enhancement-mode GaN transistors that operate with standard silicon gate drivers, eliminating the need for costly external driving interfaces. Their technology addresses the inefficiencies of traditional silicon devices by enabling higher switching frequencies and reducing energy losses by up to 50%, resulting in smaller and more efficient consumer electronics.
Funding
$60M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
BVFounders
Product
Problem
Traditional silicon-based transistors in power electronics applications suffer from significant energy losses and heat generation, limiting efficiency and increasing the size and weight of electronic devices. These limitations hinder advancements in applications requiring high power density and energy efficiency, such as consumer electronics, motor drives, and electric vehicles.
Solution
Cambridge GaN Devices (CGD) offers enhancement-mode Gallium Nitride (GaN) transistors that significantly improve power efficiency compared to silicon-based devices. CGD's ICeGaN technology enables higher switching frequencies and reduces energy losses by up to 50%, leading to smaller, lighter, and more efficient power electronic systems. Unlike other GaN devices, ICeGaN transistors are designed for ease of use with standard silicon gate drivers, eliminating the need for complex and costly external driving circuits. The integration of intelligent temperature control enhances gate reliability and allows operation similar to MOSFETs.
Target Audience
CGD's primary customers are designers and manufacturers of power electronics systems in sectors such as consumer electronics, industrial motor drives, renewable energy, and electric vehicles.
Features
- Enhancement-mode GaN transistors compatible with standard silicon gate drivers
- Reduced energy losses by up to 50% compared to silicon devices
- Higher switching frequencies for increased power density
- Integrated temperature control for enhanced gate reliability
- Lower on-resistance for improved efficiency
- Suitable for various power topologies, including multi-level inverters
- Evaluation kits available for motor control and power efficiency testing