This startup produces high-quality graphene on silicon carbide (SiC) substrates. Their graphene products can be used in advanced electronic devices and sensors, offering superior performance compared to traditional materials.
Funding
Funding not disclosed
Founders
Product
Problem
The unique properties of graphene, such as high electron mobility, are not fully realized due to limitations in producing high-quality, large-area graphene on insulating substrates. This restricts its application in advanced electronic devices and sensors where superior performance is required.
Solution
BeeGraphene addresses this challenge by providing premium-quality, monocrystalline graphene grown directly on silicon carbide (SiC) substrates. Their proprietary technology, based on reversible graphitization of SiC under silicon flux, ensures high purity and quality, protected by international patents. This wafer-scale epitaxial graphene on SiC enables researchers and developers to explore and implement graphene's exceptional properties in next-generation electronics, sensors, and other advanced applications. BeeGraphene offers graphene on SiC in various sizes, including custom dimensions, along with characterization and R&D services to support specific customer needs.
Target Audience
The primary target audience includes researchers and developers in the fields of electronics, sensors, and nanotechnology seeking high-quality graphene on insulating substrates for research, development, and prototyping of advanced devices.
Features
- Monocrystalline graphene with 1 to 5 layers on silicon carbide substrates
- Wafer sizes up to 2 inches available
- Proprietary production method: partly reversible graphitization of SiC (0001) under silicon atoms’ flux
- N-doped graphene with electric charge neutral point (Dirac point) around 0.35 eV below Fermi level
- Average surface roughness (RMS): 0.36-0.81 nm
- Average surface step’s height: 0.7-1.4 nm
- Average surface terrace’s width: 260-344 nm
- Characterization services available, including ARPES, XPS, spectrophotometry, Raman spectrometry, and AFM