Analog Power Conversion provides silicon‑carbide (SiC) MOSFET power modules with integrated ultra‑fast gate‑driver ICs for multi‑kilowatt, high‑frequency operation up to 2 MHz. The turnkey service includes device selection, layout optimization, and high‑yield production, delivering low on‑resistance, robust thermal performance, and >99.9 % reliability for EV chargers, solar and wind inverters, HVDC converters, and microgrid power electronics.
Funding
Funding not disclosed
Founders
Product
Problem
Conventional silicon‑based power switches suffer from high conduction losses, limited switching speeds, and bulky thermal management, which constrain efficiency and power density in modern electric‑vehicle chargers, solar inverters, and microgrid converters. These limitations increase system cost and reduce the viability of high‑performance green‑energy applications.
Solution
Analog Power Conversion (APC) delivers silicon‑carbide (SiC) MOSFETs engineered for very high power and very high frequency operation, paired with custom‑designed gate‑driver integrated circuits that enable fast, low‑loss switching. The combined power module provides superior thermal performance, reduced on‑resistance, and robust reliability for demanding industrial and automotive environments. APC’s turnkey design service guides customers from specification through high‑yield mass production, ensuring optimized device selection and layout for each application. All devices undergo rigorous burn‑in screening and process‑control verification to meet stringent quality standards. The resulting modules enable compact, efficient power conversion architectures that support higher power densities and lower system costs in EV charging stations, solar and wind inverters, HVDC links, and microgrid deployments.
Target Audience
Primary customers are OEMs and system integrators developing EV charging infrastructure, solar and wind inverter platforms, HVDC converters, and microgrid power electronics that require high‑efficiency, high‑frequency SiC switching solutions.
Features
- SiC voltage‑controlled MOSFETs rated for multi‑kilowatt power levels with on‑resistance as low as 10 mΩ·cm²
- Integrated ultra‑fast gate‑driver ICs delivering sub‑nanosecond turn‑on/off times and adaptive dead‑time control
- High‑frequency operation up to 2 MHz, enabling smaller passive components and higher power density
- Proprietary burn‑in and statistical process control (SPC) flow guaranteeing >99.9 % reliability for automotive and defense grades
- Turnkey design‑to‑production service, including device selection, layout optimization, and high‑yield wafer fabrication
- Fully packaged power modules with built‑in thermal management features and conformal coating for harsh environments
- Compatibility with industry standards (e.g., IEC 61800‑9‑2, ISO 26262) and ready integration into existing PCB footprints