Aluvia Photonics provides photonic integrated circuits built on a proprietary aluminum oxide material platform offering broadband spectral coverage from UV to mid-IR. This platform features ultra-low propagation losses and enables integrated optical amplification through rare-earth ion doping. The company offers multi-project wafers, dedicated wafer runs, and pre-validated design blocks to accelerate PIC prototyping and volume manufacturing.
Funding
Funding not disclosed
Founders
Product
Problem
Conventional photonic integration platforms struggle to cover the full ultraviolet‑to‑mid‑infrared spectrum, exhibit relatively high waveguide loss, and lack native on‑chip optical amplification, limiting performance and system‑level integration for emerging applications such as quantum photonics, LIDAR, and broadband communications.
Solution
Aluvia Photonics delivers a proprietary aluminium‑oxide (AlOx) photonic integrated circuit platform that provides continuous transmission from 200 nm to ~3 µm with ultra‑low propagation loss (≈1 dB/cm at 369 nm, ≈5 dB/m at 1550 nm). The material’s compatibility with rare‑earth ion doping enables on‑chip amplification (Er³⁺, Yb³⁺, Nd³⁺, Tm³⁺) across key telecom and near‑IR bands. Leveraging a 200 mm CMOS‑compatible process, Aluvia offers multi‑project wafer (MPW) runs for rapid prototyping, dedicated wafer productions for volume scaling, and a library of pre‑qualified design blocks to accelerate development while reducing risk. The end‑to‑end service—from design enablement to wafer fabrication—allows customers to move from concept to high‑performance photonic systems without building their own foundry capability.
Target Audience
The primary customers are photonic design teams and system integrators in optical communications, quantum information processing, LIDAR, augmented‑reality displays, and biomedical instrumentation that require broadband, low‑loss, and on‑chip amplified PICs.
Features
- Proprietary AlOx waveguide material delivering broadband transmission (200 nm
- 3 µm) and ultra‑low loss (≈1 dB/cm at UV, ≈5 dB/m at telecom wavelengths).
- Integrated rare‑earth ion doping (Er³⁺, Yb³⁺, Nd³⁺, Tm³⁺) for on‑chip erbium‑doped waveguide amplifiers (EDWAs) and other active functions.
- Fully CMOS‑compatible 200 mm wafer process enabling cost‑effective scaling and alignment with existing semiconductor fabs.
- Multi‑project wafer service with standardized stack options (UV‑VIS 100 nm AlOx, NIR 400 nm AlOx) and pay‑per‑die pricing for fast R&D cycles.
- Dedicated wafer runs offering custom stack thicknesses, active AlOx layers, and volume production pathways (mid‑ to high‑volume within 6‑12 months).
- Design‑block library containing splitters, wavelength‑division multiplexers, EDWAs, and laser‑attach modules, all pre‑qualified for the AlOx platform.
- High power handling and low‑crosstalk waveguide geometry suitable for LIDAR beam steering, integrated lasers, and quantum ion‑trap optics.