Alpsemi develops wide and ultra‑wide bandgap semiconductor devices that enable highly efficient power conversion and advanced protection for applications such as smart grids, data centers, and electric vehicles. By vertically integrating material and device engineering, the company delivers solutions that improve energy efficiency and reliability in high‑performance power architectures.
Funding
€17M raised to dateRaised to date based on public sources. This may differ from the amount the company actually raised and is based only on what is publicly available on the internet.
CGNSYCFounders
Product
Problem
Modern electrification systems such as smart grids, data centers, and electric vehicles require power conversion components that can handle higher voltages, temperatures, and switching speeds while maintaining reliability and efficiency. Conventional silicon semiconductors struggle to meet these demands, leading to increased losses, larger form factors, and limited protection capabilities.
Solution
AlpSemi develops wide bandgap (WBG) and ultra‑wide bandgap (UWBG) semiconductor devices that operate at higher electric fields and temperatures than traditional silicon. By leveraging vertical integration from material growth to device packaging, the company delivers power transistors and protection components optimized for high‑efficiency conversion and robust fault handling. These devices enable compact, low‑loss power architectures suitable for smart‑grid converters, data‑center power supplies, and electric‑vehicle drivetrains. AlpSemi collaborates with industry partners to tailor solutions to specific market requirements, accelerating the adoption of next‑generation power electronics.
Target Audience
Primary customers are OEMs and system integrators in smart‑grid infrastructure, data‑center power supplies, and electric‑vehicle powertrain manufacturers seeking high‑efficiency, high‑reliability power electronics.
Features
- Wide and ultra‑wide bandgap silicon‑carbide (SiC) and gallium‑nitride (GaN) devices with high breakdown voltage and low on‑resistance
- High‑temperature operation up to 300 °C, reducing cooling requirements and system size
- Fast switching speeds that minimize conduction and switching losses for improved efficiency
- Integrated protection functions (over‑voltage, over‑current, short‑circuit) built into the semiconductor architecture
- Vertically integrated manufacturing from crystal growth to final device packaging for consistent performance and reliability