ALLOS Semiconductors provides Gallium Nitride on Silicon (GaN-on-Si) epiwafer technologies for high-yield micro LED manufacturing. Their proprietary _GaN.finity_ platform enables scaling to 300 mm wafers with superior uniformity and crystal quality, facilitating cost-effective integration with silicon driver chips for advanced displays.
Funding
Funding not disclosed
Founders
Product
Problem
The development of next-generation displays, particularly those utilizing micro LED technology, faces significant manufacturing challenges. Achieving the required uniformity, crystal quality, and yield for mass production on standard semiconductor processing wafers is a critical bottleneck.
Solution
ALLOS Semiconductors provides Gallium Nitride on Silicon (GaN-on-Si) epiwafer technologies designed to enable high-yield micro LED manufacturing. Their proprietary _GaN.finity_ platform allows for the scaling of GaN-on-Si epiwafer stacks to 300 mm wafer diameters while mitigating internal stress and plastic deformation. This approach ensures superior uniformity and crystal quality, essential for the millions of tiny LEDs required in advanced displays, and facilitates cost-effective integration with silicon driver chips within standard 200 mm and 300 mm processing fabs. ALLOS's technology supports the full color spectrum, including native green and red GaN-on-Si LED epiwafers, and is compatible with all established MOCVD epitaxy reactor vendors.
Target Audience
Primary customers are micro LED display manufacturers, including startups, consumer electronics companies, and niche market players, who require advanced epiwafer technology for high-volume production.
Features
- Proprietary _GaN.finity_ technology for scaling GaN-on-Si epiwafer stacks to 300 mm wafer diameter with reduced internal stress and plastic deformation.
- Epiwafers delivered with a thickness of 775 µm and a bow of below 50 µm, meeting CMOS fab requirements.
- Industry-leading uniformity parameters across the entire epiwafer area, crucial for color consistency in micro LED displays.
- Excellent GaN-on-Si crystal quality (TDD) with innovative breakthroughs eliminating micro defects that are yield-killers for micro LEDs.
- Support for full color spectrum development, including native green and red GaN-on-Si LED epiwafers, and novel multi-color on-wafer approaches.
- Hardware-independent technology proven to work with MOCVD epitaxy reactors from all established vendors.
- Proprietary and patent-protected technologies.