Alithia designs advanced Gallium Nitride (GaN) power semiconductors, including diodes and transistors. These components enable more efficient power conversion in applications like electric vehicles and data centers.
Funding
Funding not disclosed
Founders
Product
Problem
Existing power electronic devices, particularly those based on silicon, struggle to meet the increasing demands for efficiency, power density, and performance in rapidly growing electrification markets. These limitations hinder advancements in areas like electric vehicles, renewable energy, and data centers.
Solution
Alithia Power designs and manufactures advanced Gallium Nitride (GaN) power semiconductors, including diodes and transistors, that offer a significant improvement over traditional silicon and silicon carbide (SiC) devices. Utilizing a vertical architecture branded as vertiGAN™, Alithia's devices direct current vertically through the device, enabling higher voltages and greater efficiency. The company's Pure3™ manufacturing solution encompasses pure design, pure materials, and pure manufacturing techniques to create high-performing, reliable, and cost-effective GaN power electronics. Alithia's vertically integrated approach allows for complete control over the manufacturing process, from substrate to chip, resulting in devices with superior performance characteristics.
Target Audience
Alithia Power targets design engineers in the electrification market, specifically those working on electric vehicles, industrial motors, data centers, renewable energy systems, and smart grids.
Features
- vertiGAN™ vertical architecture for enhanced voltage capabilities and efficiency
- Pure3™ manufacturing process encompassing pure design, pure materials, and pure manufacturing
- GaN-on-GaN construction utilizing high-quality GaN substrates with low dislocation density
- Devices designed for high-power, high-voltage applications
- Lower on-resistance compared to silicon and SiC devices, reducing energy loss
- Faster switching speeds for improved efficiency in power conversion
- Smaller chip size, enabling higher power density and reduced system footprint
- High-quality drift layers and field management layers for reliable high-voltage operation